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FCAB22680L

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The FCAB22680L from Panasonic Corporation is a MOSFET with Continous Drain Current 31.8 A, Drain Source Resistance 1.8 to 7.6 Milliohm, Drain Source Breakdown Voltage 23 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.4 V. Tags: Chip. More details for FCAB22680L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB22680L
  • Manufacturer
    Panasonic Corporation
  • Description
    23 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    31.8 A
  • Drain Source Resistance
    1.8 to 7.6 Milliohm
  • Drain Source Breakdown Voltage
    23 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    36 nC
  • Power Dissipation
    3.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Lithium-ion Battery Protection

Technical Documents
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