1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Panasonic Corporation
  6. FCAB22710L

FCAB22710L

Download Datasheet Request Quote

Note : Your request will be directed to Panasonic Corporation.

The FCAB22710L from Panasonic Corporation is a MOSFET with Drain Source Resistance 3.9 to 70 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 1.3 to 2.35 V, Gate Charge 17.5 nC. Tags: Chip. More details for FCAB22710L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FCAB22710L
  • Manufacturer
    Panasonic Corporation
  • Description
    12 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Drain Source Resistance
    3.9 to 70 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    1.3 to 2.35 V
  • Gate Charge
    17.5 nC
  • Power Dissipation
    0.51 to 3 W
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products