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BSS123

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The BSS123 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 0.17 A, Drain Source Resistance 4000 to 10000 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for BSS123 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSS123
  • Manufacturer
    PANJIT Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.17 A
  • Drain Source Resistance
    4000 to 10000 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.8 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23

Technical Documents
View details on the manufacturer's website
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