PJE8401

Note : Your request will be directed to PANJIT Semiconductor.

PJE8401 Image

The PJE8401 from PANJIT Semiconductor is a MOSFET with Continous Drain Current -0.9 A, Drain Source Resistance 110 to 210 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.4 V. Tags: Surface Mount. More details for PJE8401 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJE8401
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.9 A
  • Drain Source Resistance
    110 to 210 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.4 V
  • Gate Charge
    5.4 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-523

Technical Documents

Latest MOSFETs

View more products