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PJMD580N60E1

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The PJMD580N60E1 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 530 to 580 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PJMD580N60E1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJMD580N60E1
  • Manufacturer
    PANJIT Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    530 to 580 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    22 to 54 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA
  • Applications
    TV Power, PD Charger, Adapter

Technical Documents
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