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PJP100P03

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The PJP100P03 from PANJIT Semiconductor is a MOSFET with Continous Drain Current -100 A, Drain Source Resistance 3.9 to 7.5 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for PJP100P03 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJP100P03
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -100 A
  • Drain Source Resistance
    3.9 to 7.5 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    107 nC
  • Power Dissipation
    119 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
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