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PJP60R980E

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The PJP60R980E from PANJIT Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 890 to 980 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for PJP60R980E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJP60R980E
  • Manufacturer
    PANJIT Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    890 to 980 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    14.4 nC
  • Power Dissipation
    58 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
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