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PJQ1912

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The PJQ1912 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 0.41 A, Drain Source Resistance 2100 to 4000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PJQ1912 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ1912
  • Manufacturer
    PANJIT Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.41 A
  • Drain Source Resistance
    2100 to 4000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.5 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN1006-3L

Technical Documents
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