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PJQ2888

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The PJQ2888 from PANJIT Semiconductor is a MOSFET with Continous Drain Current -1.5 A, Drain Source Resistance 240 to 600 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for PJQ2888 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ2888
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1.5 A
  • Drain Source Resistance
    240 to 600 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    2.2 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-8L

Technical Documents
View details on the manufacturer's website
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