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PJQ4416EP

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The PJQ4416EP from PANJIT Semiconductor is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 9.3 to 17 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for PJQ4416EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ4416EP
  • Manufacturer
    PANJIT Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    9.3 to 17 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    16 nC
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3333-8L

Technical Documents
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