PJQ4425DP

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PJQ4425DP Image

The PJQ4425DP from PANJIT Semiconductor is a MOSFET with Continous Drain Current -43 A, Drain Source Resistance 8.5 to 24 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1.1 to -0.5 V. Tags: Surface Mount. More details for PJQ4425DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ4425DP
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -43 A
  • Drain Source Resistance
    8.5 to 24 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1.1 to -0.5 V
  • Gate Charge
    29 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3333-8L

Technical Documents

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