PJS6412

Note : Your request will be directed to PANJIT Semiconductor.

PJS6412 Image

The PJS6412 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 18.5 to 32 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PJS6412 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJS6412
  • Manufacturer
    PANJIT Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    18.5 to 32 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    4.3 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23 6L-1

Technical Documents

Latest MOSFETs

View more products