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PJS6415AE

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The PJS6415AE from PANJIT Semiconductor is a MOSFET with Continous Drain Current -4.9 A, Drain Source Resistance 50 to 180 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for PJS6415AE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJS6415AE
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.9 A
  • Drain Source Resistance
    50 to 180 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    6.9 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23 6L

Technical Documents
View details on the manufacturer's website
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