1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. PANJIT Semiconductor
  6. PJW1NA50

PJW1NA50

Download Datasheet Request Quote

Note : Your request will be directed to PANJIT Semiconductor.

PJW1NA50 Image

The PJW1NA50 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 7600 to 9000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PJW1NA50 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJW1NA50
  • Manufacturer
    PANJIT Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    7600 to 9000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    4.2 nC
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products