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PSMQC076N12LS1

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PSMQC076N12LS1 Image

The PSMQC076N12LS1 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 91.4 A, Drain Source Resistance 6.1 to 11 milliohm, Drain Source Breakdown Voltage 115 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for PSMQC076N12LS1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMQC076N12LS1
  • Manufacturer
    PANJIT Semiconductor
  • Description
    115 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    91.4 A
  • Drain Source Resistance
    6.1 to 11 milliohm
  • Drain Source Breakdown Voltage
    115 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    105 nC
  • Power Dissipation
    50 to 125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-8L
  • Applications
    SR solutions of Travel Adapter, PD Charger, Gaming Adapter

Technical Documents
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