PRM021N20CT

Note : Your request will be directed to PFC Device.

The PRM021N20CT from PFC Device is a MOSFET with Continous Drain Current 50 to 73 A, Drain Source Resistance 16 to 21.0 milli-ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 5.0 V. Tags: Through Hole. More details for PRM021N20CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM021N20CT
  • Manufacturer
    PFC Device
  • Description
    200 V, 50 to 73 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 to 73 A
  • Drain Source Resistance
    16 to 21.0 milli-ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 5.0 V
  • Gate Charge
    36.4 nC
  • Switching Speed
    14 to 101 ns
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 2718 pF

Technical Documents

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