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PRM1R6N04HN5

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The PRM1R6N04HN5 from PFC Device is a MOSFET with Continous Drain Current 60 to 202 A, Drain Source Resistance 1.3 to 1.6 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for PRM1R6N04HN5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM1R6N04HN5
  • Manufacturer
    PFC Device
  • Description
    40 V, 60 to 202 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 to 202 A
  • Drain Source Resistance
    1.3 to 1.6 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    94 nC
  • Switching Speed
    22 to 108 ns
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN-5x6
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 5243 pF

Technical Documents
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