PRM1R8N04N5

Note : Your request will be directed to PFC Device.

The PRM1R8N04N5 from PFC Device is a MOSFET with Continous Drain Current 100 to 190 A, Drain Source Resistance 1.4 to 2.4 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for PRM1R8N04N5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM1R8N04N5
  • Manufacturer
    PFC Device
  • Description
    40 V, 100 to 190 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 to 190 A
  • Drain Source Resistance
    1.4 to 2.4 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    60.0 nC
  • Switching Speed
    16 to 90 ns
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN-5x6
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 3276 pF

Technical Documents

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