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PRM4R2N10CTB

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The PRM4R2N10CTB from PFC Device is a MOSFET with Continous Drain Current 110 to 185 A, Drain Source Resistance 3.6 to 6.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for PRM4R2N10CTB can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM4R2N10CTB
  • Manufacturer
    PFC Device
  • Description
    100 V, 110 to 185 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 to 185 A
  • Drain Source Resistance
    3.6 to 6.0 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    110 nC
  • Switching Speed
    20 to 157 ns
  • Power Dissipation
    275 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 6680 pF

Technical Documents
View details on the manufacturer's website
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