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PRM4R9N10CT

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The PRM4R9N10CT from PFC Device is a MOSFET with Continous Drain Current 88.6 to 140 A, Drain Source Resistance 4.9 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for PRM4R9N10CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM4R9N10CT
  • Manufacturer
    PFC Device
  • Description
    100 V, 88.6 to 140 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    88.6 to 140 A
  • Drain Source Resistance
    4.9 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    70 nC
  • Switching Speed
    30 to 69 ns
  • Power Dissipation
    192 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 5100 pF

Technical Documents
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