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PSM11N60CT

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The PSM11N60CT from PFC Device is a MOSFET with Continous Drain Current 7 to 11 A, Drain Source Resistance 0.29 to 0.88 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Through Hole. More details for PSM11N60CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSM11N60CT
  • Manufacturer
    PFC Device
  • Description
    600 V, 7 to 11 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 to 11 A
  • Drain Source Resistance
    0.29 to 0.88 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    40 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    PFC stages, hard switching PWM stages and resonant switching stages for PC, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
  • Note
    Input Capacitance :- 1240 pF

Technical Documents
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