The UF4C120053K4C from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. This SiC MOSFET has a gate-source voltage of up to 20 V and a gate threshold voltage of 4.8 V. It has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of 53 mΩ. This RoHS compliant MOSFET has a continuous drain current of up to 34 A and power dissipation of less than 263 W. It offers an efficient gate drive operation due to its ultra-low gate charge and exceptional reverse recovery characteristics. This MOSFET is available as a through-hole package and is ideal for PV inverters, induction heating, motor drives, EV charging, switch-mode power supplies, and power factor correction applications.