The UF4SC120030K4S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. This SiC MOSFET has a gate-source voltage of up to 25 V and a gate threshold voltage of 4.8 V.  It has a drain-source breakdown voltage of over 1200 V and drain-source on-resistance of 56 mΩ. This MOSFET has a continuous drain current of up to 53 A and power dissipation of less than 341 W. It is available in a through-hole package and is ideal for EV charging, PV inverters, and switch-mode power supplies, power factor correction modules, motor drives, and induction heating applications.