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RM003N600ES2

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The RM003N600ES2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 0.03 A, Drain Source Resistance 280000 to 500000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.6 V. Tags: Surface Mount. More details for RM003N600ES2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM003N600ES2
  • Manufacturer
    Rectron Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.03 A
  • Drain Source Resistance
    280000 to 500000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.6 V
  • Gate Charge
    1 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23

Technical Documents
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