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RM02P60S2

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The RM02P60S2 from Rectron Semiconductor is a MOSFET with Continous Drain Current -0.17 A, Drain Source Resistance 3300 to 10000 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.9 V. Tags: Surface Mount. More details for RM02P60S2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM02P60S2
  • Manufacturer
    Rectron Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.17 A
  • Drain Source Resistance
    3300 to 10000 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.9 V
  • Power Dissipation
    0.225 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management, Video moniter, Halogen free

Technical Documents
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