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RM03P30S2E

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RM03P30S2E Image

The RM03P30S2E from Rectron Semiconductor is a MOSFET with Continous Drain Current -0.3 A, Drain Source Resistance 1700 to 2900 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for RM03P30S2E can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM03P30S2E
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.3 A
  • Drain Source Resistance
    1700 to 2900 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    0.55 to 0.72 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Portable appliances, Load switch appliances, Halogen free

Technical Documents
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