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RM100N60BT2

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The RM100N60BT2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 6.3 to 7.4 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM100N60BT2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM100N60BT2
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    6.3 to 7.4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    81 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220-3L
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen free

Technical Documents
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