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RM10N600LD

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The RM10N600LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 10.2 A, Drain Source Resistance 268 to 360 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.3 to 4.3 V. Tags: Surface Mount. More details for RM10N600LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM10N600LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.2 A
  • Drain Source Resistance
    268 to 360 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.3 to 4.3 V
  • Gate Charge
    17.9 nC
  • Power Dissipation
    67.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
View details on the manufacturer's website
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