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RM120N60T2

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The RM120N60T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 3.5 to 5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.4 V. Tags: Through Hole. More details for RM120N60T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM120N60T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    3.5 to 5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.4 V
  • Gate Charge
    67 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification, Halogen free

Technical Documents
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