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RM12N650TI

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The RM12N650TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 11.5 A, Drain Source Resistance 300 to 360 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for RM12N650TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM12N650TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.5 A
  • Drain Source Resistance
    300 to 360 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    19 nC
  • Power Dissipation
    32.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
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