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RM12P30S8

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RM12P30S8 Image

The RM12P30S8 from Rectron Semiconductor is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 11.5 to 25 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RM12P30S8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM12P30S8
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    11.5 to 25 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    24 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    PWM applications, Load switch, Battery charge in cellular handset

Technical Documents
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