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RM16P60LD

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The RM16P60LD from Rectron Semiconductor is a MOSFET with Continous Drain Current -16 A, Drain Source Resistance 39 to 65 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.2 to -1.2 V. Tags: Surface Mount. More details for RM16P60LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM16P60LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -16 A
  • Drain Source Resistance
    39 to 65 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1.2 V
  • Gate Charge
    22.4 to 31 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TO-252(D-PAK)
  • Applications
    Motor Drive, Power Tools LED, Lighting

Technical Documents
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