1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM180N60T2

RM180N60T2

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM180N60T2 Image

The RM180N60T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 2.5 to 2.9 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM180N60T2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM180N60T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    2.5 to 2.9 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    70 nC
  • Power Dissipation
    220 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification, Halogen free

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products