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RM185N30DF

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The RM185N30DF from Rectron Semiconductor is a MOSFET with Continous Drain Current 185 A, Drain Source Resistance 1.1 to 1.8 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for RM185N30DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM185N30DF
  • Manufacturer
    Rectron Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    185 A
  • Drain Source Resistance
    1.1 to 1.8 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    125 to 140 nC
  • Power Dissipation
    95 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN5X6-8L
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification

Technical Documents
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