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RM1A2N20ES2

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RM1A2N20ES2 Image

The RM1A2N20ES2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 1.2 A, Drain Source Resistance 120 to 220 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.1 V. Tags: Surface Mount. More details for RM1A2N20ES2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM1A2N20ES2
  • Manufacturer
    Rectron Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 A
  • Drain Source Resistance
    120 to 220 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.1 V
  • Gate Charge
    1.6 nC
  • Power Dissipation
    0.42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Logic-level shift, Interfacing switching, Load switching, Halogen free

Technical Documents
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