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RM1A5N30S3E

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RM1A5N30S3E Image

The RM1A5N30S3E from Rectron Semiconductor is a MOSFET with Continous Drain Current 1.5 A, Drain Source Resistance 110 to 185 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for RM1A5N30S3E can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM1A5N30S3E
  • Manufacturer
    Rectron Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.5 A
  • Drain Source Resistance
    110 to 185 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    1.4 to 4.1 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    Power switching application, Hard switched and high frequency circuits, DC-DC Converter, Halogen free

Technical Documents
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