1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM2004NE

RM2004NE

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM2004NE Image

The RM2004NE from Rectron Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 17 to 30 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for RM2004NE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM2004NE
  • Manufacturer
    Rectron Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    17 to 30 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    8 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    PWM application, Load switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products