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RM210N75HD

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The RM210N75HD from Rectron Semiconductor is a MOSFET with Continous Drain Current 210 A, Drain Source Resistance 3 to 4 milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM210N75HD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM210N75HD
  • Manufacturer
    Rectron Semiconductor
  • Description
    75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    210 A
  • Drain Source Resistance
    3 to 4 milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    250 nC
  • Power Dissipation
    330 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TO-263(D2-PAK)
  • Applications
    Automotive applications, Hard switched and high frequency circuits, Uninterruptible power supply, halogen free

Technical Documents
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