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RM24N200TI

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The RM24N200TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 62 to 80 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for RM24N200TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM24N200TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24 A
  • Drain Source Resistance
    62 to 80 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    60 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
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