The RM2A8N60S4 from Rectron Semiconductor is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 80 to 110 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for RM2A8N60S4 can be seen below.