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RM2A8N60S4

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RM2A8N60S4 Image

The RM2A8N60S4 from Rectron Semiconductor is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 80 to 110 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for RM2A8N60S4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM2A8N60S4
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    80 to 110 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    7 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen-free

Technical Documents
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