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RM3075S8(N)

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RM3075S8(N) Image

The RM3075S8(N) from Rectron Semiconductor is a MOSFET with Continous Drain Current -4.6 to 6.8 A, Drain Source Resistance 22 to 103 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.3 to 2.3 V. Tags: Surface Mount. More details for RM3075S8(N) can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM3075S8(N)
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.6 to 6.8 A
  • Drain Source Resistance
    22 to 103 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.3 to 2.3 V
  • Gate Charge
    6.8 to 16 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    DC/DC converters, Power management

Technical Documents
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