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RM30P30D3

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The RM30P30D3 from Rectron Semiconductor is a MOSFET with Continous Drain Current -30 A, Drain Source Resistance 7 to 13 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for RM30P30D3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM30P30D3
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -30 A
  • Drain Source Resistance
    7 to 13 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Gate Charge
    35 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN3x3
  • Applications
    PWM applications, Load switch, Power management, Halogen free

Technical Documents
View details on the manufacturer's website
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