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RM30P55LD

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RM30P55LD Image

The RM30P55LD from Rectron Semiconductor is a MOSFET with Continous Drain Current -30 A, Drain Source Resistance 30 to 40 milliohm, Drain Source Breakdown Voltage -55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for RM30P55LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM30P55LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    -55 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -30 A
  • Drain Source Resistance
    30 to 40 milliohm
  • Drain Source Breakdown Voltage
    -55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    56 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252-2L
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply
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