The RM35N30DN from Rectron Semiconductor is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 4.8 to 9.5 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for RM35N30DN can be seen below.