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RM35N30DN

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The RM35N30DN from Rectron Semiconductor is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 4.8 to 9.5 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for RM35N30DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM35N30DN
  • Manufacturer
    Rectron Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    4.8 to 9.5 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    19 nC
  • Power Dissipation
    35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Secondary side synchronous rectifier, High side switch in POL DC/DC converter, Halogen free

Technical Documents
View details on the manufacturer's website
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