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RM35P30DN

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The RM35P30DN from Rectron Semiconductor is a MOSFET with Continous Drain Current -32 A, Drain Source Resistance 20 to 32 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RM35P30DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM35P30DN
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -32 A
  • Drain Source Resistance
    20 to 32 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    12.5 nC
  • Power Dissipation
    29 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN3x3
  • Applications
    PWM applications, Load switch, Power management, Halogen free

Technical Documents
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