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RM40N100LD

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The RM40N100LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 14.5 to 17 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM40N100LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM40N100LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    14.5 to 17 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    94 nC
  • Power Dissipation
    140 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252(D-PAK)
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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