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RM4606S8 (N)

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RM4606S8 (N) Image

The RM4606S8 (N) from Rectron Semiconductor is a MOSFET with Continous Drain Current -7 to 6.5 A, Drain Source Resistance 20 to 33 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 3 V. Tags: Surface Mount. More details for RM4606S8 (N) can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM4606S8 (N)
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -7 to 6.5 A
  • Drain Source Resistance
    20 to 33 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to 3 V
  • Gate Charge
    9.2 to 13 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8

Technical Documents
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