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RM4N500LD

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The RM4N500LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1100 to 1500 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for RM4N500LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM4N500LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1100 to 1500 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    18 to 24 nC
  • Power Dissipation
    54 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252(D-PAK)

Technical Documents
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