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RM4N650TI

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The RM4N650TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1000 to 1200 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for RM4N650TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM4N650TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1000 to 1200 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    6.5 to 10 nC
  • Power Dissipation
    28.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
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