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RM4P30S6

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RM4P30S6 Image

The RM4P30S6 from Rectron Semiconductor is a MOSFET with Continous Drain Current -4.5 A, Drain Source Resistance 42 to 90 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.2 V. Tags: Surface Mount. More details for RM4P30S6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM4P30S6
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.5 A
  • Drain Source Resistance
    42 to 90 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.2 V
  • Gate Charge
    9 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L

Technical Documents
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